The engineering of optical components for CO2 high-power lasers and amplifiers for the generation of extreme ultraviolet (EUV) radiation in the semiconductor industry demands great attention and accuracy in order to achieve the required stability and precision. Simulations and analyses are as essential parts of the engineering as are tests of functional models and prototypes.
BeamXpertDESIGNER supports TRUMPF Lasersystems for Semiconductor Manufacturing GmbH during the design phase of the optical layout, especially by its easy usability and the immediate visualization of the 3D beam path including the consideration of the disturbing contours of all components.
During the following detailing of the design, simple analyses (e. g. unwanted partial beams due to residual reflection from transmitting optics) as well as the exact determination of beam parameters (beam size, power density, ...) at any point of the beam path can be performed very quickly and reliably with the help of BeamXpertDESIGNER.
Designing and simulating experimental setups with a few dozen optics is as easy as creating complete models with several hundred optics and a total beam length of more than one kilometer.
The EUV generation systems from TRUMPF are being integrated by the lithography system manufacturer ASML together with components from the company Zeiss into systems for the realization of the current 5 nm production process.